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rev 1 january 2006 1/11 11 STD16NF06 n-channel 60v - 0.060 ? - 16a - dpak stripfet? ii power mosfet general features typical r ds(on) = 0.060 ? exceptional dv/dt capability 100% avalanche tested application oriented characterization description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility applications audio amplifiers power tools automotive environment internal schematic diagram type v dss r ds(on) i d STD16NF06 60v <0.070 ? 16a 1 3 dpak to-252 www.st.com order codes part number marking package packaging STD16NF06t4 d16nf06 to-252 tape & reel
1 electrical ratings STD16NF06 2/11 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0v) 60 v v dgr drain-gate voltage (r gs = 20 k ? ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25c 16 a i d drain current (continuous) at t c = 100c 11 a i dm note 4 drain current (pulsed) 64 a p tot total dissipation at t c = 25c 40 w derating factor 0.27 w/c dv/dt peak diode recovery voltage slope 10.5 v/ns eas single pulse avalanche energy 178 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal data r thjc thermal resistance junction-case max 3.75 c/w r thja thermal resistance junction-amb max 100 c/w t l maximum lead temperature for soldering purpose 275 c
STD16NF06 2 electrical characteristics 3/11 2 electrical characteristics ( t case = 25 c unless otherwise specified ) table 3. on/off states table 5. switching times symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c =125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 a v gs(th) gate threshold voltage v ds = v gs i d = 250a 2v r ds(on) static drain-source on resistance v gs = 10v i d = 8a 0.060 0.070 ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs note 5 forward transconductance v ds = 25v i d = 8a 6s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15v, f = 1mhz, v gs = 0 400 103 41.5 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =30 i d = 16a v gs =10v figure 14 on page 7 14.1 2.8 5.4 nc nc nc symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30v, i d = 8a, r g = 4.7 ?, v gs = 10v figure 13 on page 7 4 15 ns ns t d(off) t f off voltage rise time falltime v dd = 30v, i d = 8a, r g = 4.7 ?, v gs = 10v figure 15 on page 7 16 5.5 ns ns
2 electrical characteristics STD16NF06 4/11 note: 1 value limited by wire bonding 2 garanted when external rg=4.7 ? and t f < t fmax . 3starting t j = 25c, i d = 19a, v dd = 18v 4 pulse width limited by safe operating area 5 pulsed: pulse duration = 300s, duty cycle 1.5% table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm note 4 source-drain current source-drain current (pulsed) 16 64 a a v sd note 5 forward on voltage i sd = 8a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 16a, di/dt = 100a/s, v dd = 20v, t j =150c figure 15 on page 7 49 78 3.2 ns c a
STD16NF06 2 electrical characteristics 5/11 2.1 electrical chraracteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
2 electrical characteristics STD16NF06 6/11 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temp erature figure 11. source-drain diode forward characteristics figure 12. normalized breakdown voltage vs temp erature
STD16NF06 3 test circuits 7/11 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive waveform figure 17. unclamped inductive load test circuit
4 package mechanical data STD16NF06 8/11 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STD16NF06 4 package mechanical data 9/11 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b
5 revision history STD16NF06 10/11 5 revision history date revision description of changes 10-jan-2006 1 first release
STD16NF06 5 revision history 11/11 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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